▎ 摘　　要

NOVELTY - Preparing two-dimensional photovoltaic detector based on focused ion beam irradiation comprises (i) providing a cleaned conductive silicon sheet substrate, (ii) preparing a gold electrode pair of micron size on the conductive silicone sheet substrate by photoetching technology to obtain a substrate with gold electrode pairs, (iii) transferring the single-layer graphene to the substrate with the gold electrodes to cover the entire surface area of the silicon sheet and the gold electrode, (iv) transferring a layer of single layer transition metal sulfide (TMDCs) on the single layer graphene, and (v) using the laser irradiation method to bombard the surface of the local single layer TMDCs, so that the single sheet TMDC surface is generated defects, and doping the single graphene with defects to form a P-N junction at the corresponding position, and non-defect single layer TMSDCs to perform electronic doping on the non-graphene single graphene. USE - The two-dimensional photovoltaic detector based on focused ion beam irradiation useful in electronic device e.g. flexible wear-resistant device with self-powered function. ADVANTAGE - The method: is simple; has strong repeatability, excellent photovoltaic performance, high external quantum conversion efficiency and wide band detection capability; shortens the time to prepare the PN junction diode of a large amount of photovoltaic detector; and can realize full automation process.