▎ 摘　　要

NOVELTY - Preparing structured graphene, comprises cleaning silicon substrate and placing into a reaction chamber for vacuumizing, introducing propane into the substrate to carbonize, introducing propane and silane gas for performing heteroepitaxial growth and cooling the epitaxial cubic silicon carbide film, depositing silicon dioxide masking layer, coating photoresist layer, carving to window shape for forming a structured pattern, heating the windowed sample to react with chlorine, placing the generated carbon film sample in a hydrofluoric acid buffer solution, and annealing the films. USE - The structured graphene is useful for producing microelectronic devices. ADVANTAGE - The method prepares structured graphene with smooth surface, good continuity and low porosity in a cost-effective manner. DETAILED DESCRIPTION - Preparing structured graphene, comprises: (a) cleaning silicon substrate of 4-12 inches to standard; (b) placing the cleaned silicon substrate into a reaction chamber of a chemical vapor deposition (CVD) system, and vacuumizing the reaction chamber until reaches a level of 10-7; (c) gradually raising the temperature of the reaction chamber to 1000-1150 under the protection of hydrogen for carbonizing, and introducing propane with flow rate of 40 sccm into the substrate to carbonize for 4-8 minutes to grow a carbide layer; (d) raising the temperature of the reaction chamber to growth temperature of 1150-1350 degrees C for 36-60 minutes, introducing propane and silane gas for performing heteroepitaxial growth of epitaxial cubic silicon carbide film, and gradually cooling epitaxial cubic silicon carbide film to room temperature for finishing under the protection of hydrogen; (e) depositing a layer of silicon dioxide masking layer with thickness of 0.5-1 micron on the surface of the grown epitaxial cubic silicon carbide film using plasma enhanced chemical vapor deposition (PECVD) method; (f) coating a layer of photoresist on a surface of the masking layer, and carving a window having the same shape with the substrate of the device to be produced, and exposing the epitaxial cubic silicon carbide for forming a structured pattern; (g) placing the windowed sample in a quartz tube, heating the tube at 700-1100 degrees C; (h) introducing mixed gas of argon gas and chlorine gas into the quartz tube, and reacting the chlorine with the exposed epitaxial cubic silicon carbide for 4-7 minutes to produce a carbon film; (i) placing the generated carbon film sample in a hydrofluoric acid buffer solution for removing silicon dioxide except the window; (j) placing the silicon dioxide removed carbon film sample on a copper film, then placing the carbon film and the copper film in argon gas, annealing the films at 900-1100 degrees C for 10-30 minutes to restructure the carbon film on the window position for producing structured graphene, and then taking down the copper film from the graphene sample.