▎ 摘　　要

NOVELTY - Method for preparing aluminum-doped graphene material, involves (i) placing substrate in a quartz tube which is located in a chemical vapor deposition system furnace under a vacuum of less than 28 Pa, annealing at 1000-1050 degrees C, introducing a mixed gas, where the quartz tube has a closed end and open end, and (ii) placing organoaluminum compound in the quartz tube, and reacting in a mixed gas atmosphere at 1000-1050 degrees C to obtain the product, where the organoaluminum compound is placed outside the chemical vapor deposition system furnace housing, and the distance from the nearest edge of the chemical vapor deposition system furnace housing is 9.5-10.5 cm. USE - The method is useful for preparing aluminum-doped graphene material. ADVANTAGE - The method successfully achieves doping of aluminum atoms in graphene.