• 专利标题:   Preparing aluminum-doped graphene material by placing substrate in quartz tube, annealing, introducing mixed gas, placing organoaluminum compound in quartz tube, and reacting in mixed gas atmosphere.
  • 专利号:   CN110775964-A
  • 发明人:   RUMLEY M, URACH S, TA G, YANG X, LIU Y, SHI Q, WANG M, LIU L
  • 专利权人:   UNIV SOOCHOW
  • 国际专利分类:   C01B032/186, C01B032/194
  • 专利详细信息:   CN110775964-A 11 Feb 2020 C01B-032/186 202017 Pages: 9 Chinese
  • 申请详细信息:   CN110775964-A CN11113278 14 Nov 2019
  • 优先权号:   CN11113278

▎ 摘  要

NOVELTY - Method for preparing aluminum-doped graphene material, involves (i) placing substrate in a quartz tube which is located in a chemical vapor deposition system furnace under a vacuum of less than 28 Pa, annealing at 1000-1050 degrees C, introducing a mixed gas, where the quartz tube has a closed end and open end, and (ii) placing organoaluminum compound in the quartz tube, and reacting in a mixed gas atmosphere at 1000-1050 degrees C to obtain the product, where the organoaluminum compound is placed outside the chemical vapor deposition system furnace housing, and the distance from the nearest edge of the chemical vapor deposition system furnace housing is 9.5-10.5 cm. USE - The method is useful for preparing aluminum-doped graphene material. ADVANTAGE - The method successfully achieves doping of aluminum atoms in graphene.