▎ 摘　　要

NOVELTY - Three-dimensional graphene preparation involves washing silicon wafer successively with deionized water, ethanol, acetone, drying silicon wafer, and then placing in an inductively coupled plasma multi-system. The coil power supply is turned on after adjusting output power of the coil, where the octafluorocyclobutane gas and sulfur hexafluoride gas are alternately introduced. The deep reactive ion etching method alternately performs passivation and etching processes without adding oxygen to obtain a silicon grass. The silicon grass is washed successively with deionized water, ethanol and acetone, and then dried for use. The dried silica grass is used as a substrate, and then placed in the center of the heating region of the tubular plasma enhanced chemical vapor deposition apparatus. USE - Method for preparing controllable distribution of three-dimensional graphene. ADVANTAGE - The method prepares the controllable distribution of three-dimensional graphene in a simple, cost-effective and eco-friendly manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic three-dimensional graphene scanning electron microscope grown on a silicon grass.