• 专利标题:   Integrated layer of oriented halogenated graphene used in e.g. microelectronic device, has preset thickness and inter-planar spacing determined by X-ray diffraction, and comprises halogen element.
  • 专利号:   US2017081194-A1
  • 发明人:   ZHAMU A, JANG B Z
  • 专利权人:   ZHAMU A, JANG B Z
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   US2017081194-A1 23 Mar 2017 C01B-031/04 201724 Pages: 30 English
  • 申请详细信息:   US2017081194-A1 US756592 23 Sep 2015
  • 优先权号:   US756592

▎ 摘  要

NOVELTY - An integrated layer of oriented halogenated graphene has thickness of 10 nm-500 mu m and inter-planar spacing (d002) of 0.35-1.2 nm as determined by X-ray diffraction. The integrated layer of oriented halogenated graphene comprises halogen elements. USE - Integrated layer of oriented halogenated graphene e.g. in form paper, film, mat and membrane is used in microelectronic device (claimed). Uses include but are not limited to gate dielectrics, dynamic random access memory, artificial muscles, energy storage devices, cell phones, video/audio systems and personal computers. ADVANTAGE - The integrated layer of oriented halogenated graphene exhibit high dielectric breakdown strength, high dielectric constants, excellent mechanical strength, excellent thermal stability and excellent chemical stability. DETAILED DESCRIPTION - An integrated layer of oriented halogenated graphene has thickness of 10 nm-500 mu m and inter-planar spacing (d002) of 0.35-1.2 nm as determined by X-ray diffraction. The integrated layer of oriented halogenated graphene is of formula: C6ZxOy (I). Z=halo; x=0.01-6.0, preferably 0.1-5.0; y=0-5.0, preferably 0.1;and x+y=less than 6.0. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the process of producing aggregated graphene. Graphite worms (104) Flexible graphite (106) Expanded graphite flakes (108) Single-layer graphene (112) Graphene film (114)