▎ 摘　　要

NOVELTY - An integrated layer of oriented halogenated graphene has thickness of 10 nm-500 mu m and inter-planar spacing (d002) of 0.35-1.2 nm as determined by X-ray diffraction. The integrated layer of oriented halogenated graphene comprises halogen elements. USE - Integrated layer of oriented halogenated graphene e.g. in form paper, film, mat and membrane is used in microelectronic device (claimed). Uses include but are not limited to gate dielectrics, dynamic random access memory, artificial muscles, energy storage devices, cell phones, video/audio systems and personal computers. ADVANTAGE - The integrated layer of oriented halogenated graphene exhibit high dielectric breakdown strength, high dielectric constants, excellent mechanical strength, excellent thermal stability and excellent chemical stability. DETAILED DESCRIPTION - An integrated layer of oriented halogenated graphene has thickness of 10 nm-500 mu m and inter-planar spacing (d002) of 0.35-1.2 nm as determined by X-ray diffraction. The integrated layer of oriented halogenated graphene is of formula: C6ZxOy (I). Z=halo; x=0.01-6.0, preferably 0.1-5.0; y=0-5.0, preferably 0.1;and x+y=less than 6.0. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the process of producing aggregated graphene. Graphite worms (104) Flexible graphite (106) Expanded graphite flakes (108) Single-layer graphene (112) Graphene film (114)