▎ 摘　　要

NOVELTY - Preparation of clean graphene comprises firstly forming a layer of transition metal film on a copper substrate, introducing carbon source gas and hydrogen, performing chemical vapor deposition, and after deposition is finished, forming graphene between the transition metal film and copper substrate; etching the copper substrate and transition metal film by acid liquid and removing the transition metal film; and after etching, taking out the copper substrate and graphene, coating the activated carbon adhesive on the surface of graphene, putting on a heating plate, curing the activated carbon adhesive on the surface of graphene, peeling off the activated carbon adhesive on the surface of graphene, and obtaining clean graphene. USE - The method is for preparation of clean graphene (claimed). ADVANTAGE - The method can remove the residual metal elements and impurities in graphene product, reduces the contact resistance between graphene and metal electrode, improves the thermal conductivity and purity of graphene, provides graphene with more than 99% purity and cleanliness, and has low cost and high preparation efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for clean graphene.