▎ 摘　　要

NOVELTY - Growing etching free graphene comprises (a) preparing structure (100) comprising conductive metal oxide (120) layer formed on a substrate (110); and (b) growing graphene (130) on the conductive metal oxide layer by heat treating at 200-450 degrees C while exposing the structure to the gas which comprises carbon. The material of the conductive metal oxide layer is indium tin oxide, indium zinc oxide or aluminum zinc oxide. USE - The etching free graphene is useful in transparent semiconductor device. ADVANTAGE - The method is convenient and economical and saves times, does not require removal of metal layer by etching process, produces graphene at low temperature and maintains excellent characteristics of graphene, and utilizes easy available raw material. DESCRIPTION OF DRAWING(S) - The figure shows a schematic process flow for growing etching free graphene by using conductive metal oxide (Drawing includes non-English language text). Structure (100) Substrate (110) Conductive metal oxides (120) Graphene (130)