▎ 摘　　要

NOVELTY - The device has electrodes (42) spaced apart from each other on a substrate. A semiconductor layer (43) and a graphene layer (44) are between the electrodes, where the graphene layer surrounds an end portion of the semiconductor layer. A gate insulation layer (45) surrounds the graphene layer. A gate (46) surrounds the gate insulation layer. The gate insulation layer is on an upper side and on lateral sides of the graphene layer. The electrodes include one of metal, conductive metal oxide, conductive metal nitride, and polysilicon. USE - Three-dimensional (3D) zero gap semiconductor graphene switching device. ADVANTAGE - The device maximizes a contact area between the graphene and layers, and the device density is increased in a limited area. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a 3D graphene switching device. Electrodes (42) Semiconductor layer (43) Graphene layer (44) Gate insulation layer (45) Gate (46)