• 专利标题:   Graphite alkene quantum capacity testing device, has source electrode lead pattern and drain electrode lead pattern that are formed with ohmic contact layer pattern, where ohmic contact layer pattern is arranged on graphene layer.
  • 专利号:   CN102981060-A, CN102981060-B
  • 发明人:   WU X, QIAN H, WU H, LV H, XIAO K
  • 专利权人:   UNIV TSINGHUA
  • 国际专利分类:   G01R027/26
  • 专利详细信息:   CN102981060-A 20 Mar 2013 G01R-027/26 201347 Pages: 19 Chinese
  • 申请详细信息:   CN102981060-A CN10331552 07 Sep 2012
  • 优先权号:   CN10331552

▎ 摘  要

NOVELTY - The device has a substrate formed with a gate electrode lead pattern, a source electrode lead pattern and a drain electrode lead wire pattern. The gate electrode is connected with the source electrode lead pattern and the drain electrode lead wire pattern. The gate electrode pattern is formed with a grid dielectric layer pattern that is formed with the source electrode pattern and the drain electrode lead wire pattern. The source electrode lead pattern and the drain electrode lead pattern are formed with an ohmic contact layer pattern that is arranged on the graphene layer. USE - Graphite alkene quantum capacity testing device. ADVANTAGE - The device improves measurement precision of a graphite alkene quantum capacitor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphite alkene quantum capacity test device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphite alkene quantum capacity testing device.'(Drawing includes non-English language text)'