• 专利标题:   Manufacturing corner laminated film for making corner graphene, involves providing base film comprising base layer, film layer, and support layer stacked in sequence, and base layer is growth substrate of film layer.
  • 专利号:   CN113858716-A
  • 发明人:   XU Z, WANG Y, WANG H, LIU J
  • 专利权人:   SONGSHAN LAKE MATERIALS LAB
  • 国际专利分类:   B32B015/04, B32B015/20, B32B027/36, B32B037/10, B32B038/10, B32B038/18, B32B043/00, B32B007/12, B32B009/00, B32B009/04, C01B032/194
  • 专利详细信息:   CN113858716-A 31 Dec 2021 B32B-007/12 202246 Chinese
  • 申请详细信息:   CN113858716-A CN11265799 28 Oct 2021
  • 优先权号:   CN11265799

▎ 摘  要

NOVELTY - Manufacturing corner laminated film involves providing base film comprising base layer, film layer, and support layer stacked in sequence, and base layer is growth substrate of film layer. The base film is cut to obtain independent first multi-layer structure and second multi-layer structure. After base layer in first multi-layer structure is removed by chemical reaction, film layer is brought into face-to-face contact with target substrate, and support layer in first multi-layer structure is removed by chemical reaction to obtain target substrate and target substrate. The bottom film is formed by film layer. After base layer in second multi-layer structure is removed by chemical reaction, film layer and film layer in base film are brought into face-to-face contact at preset angle, and second multi-layer structure is removed by chemical reaction support layer. USE - Method for manufacturing corner laminate film used for making corner graphene (claimed). ADVANTAGE - The method enables to have simple and easy implementation, and facilitates mass production of laminated structures with specific angles. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: 1. a method for making corner graphene, which involves: a. realizing by first diaphragm and second diaphragm from same sheet of graphene with given angle surface-to-surface bonding; b. manufacturing corner laminated film; c. etching growth substrate by first chemical reagent, attaching transferred to target substrate and single crystal graphene to target substrate, peeling off support film by thoroughly thermally curing adhesive layer, and removing adhesive layer by second chemical agent to obtain first combined film; and d. etching growth substrate by first chemical agent, following by transfer to first composite film, stacking two layers of single crystal graphene with given turn angle, by thoroughly heating bonding layer after curing, peeling off support film, and removing adhesive layer by second chemical agent; and 2. a device for making corner graphene, which comprises base, surface of base is configured with first support frame, and first support frame is used to hold first combined film, upright, standing on base, second support frame is disposed on upright column in manner capable of aligned and contacted with first support frame, and second support frame is used to hold second trimming film from which growth base film has been etched.