• 专利标题:   Graphene nano-ribbon array for e.g. FET, has graphene nanoribbons formed along armchair crystallographic direction of graphene, where long axes of graphene nanoribbons are oriented along direction of germanium substrate.
  • 专利号:   US9287359-B1, US2016079357-A1, WO2016044047-A1
  • 发明人:   ARNOLD M S, JACOBBERGER R M
  • 专利权人:   WISCONSIN ALUMNI RES FOUND
  • 国际专利分类:   H01L021/02, H01L027/108, H01L029/04, H01L029/06, H01L029/08, H01L029/16, H01L031/00, C01B031/04, C01G017/00
  • 专利详细信息:   US9287359-B1 15 Mar 2016 H01L-027/108 201622 Pages: 19 English
  • 申请详细信息:   US9287359-B1 US486149 15 Sep 2014
  • 优先权号:   US486149

▎ 摘  要

NOVELTY - The array has a germanium substrate comprising a facet. Multiple graphene nanoribbons are formed on the facet of the germanium substrate, where average aspect ratio of the graphene nanoribbons is about 20. The graphene nanoribbons are formed along armchair crystallographic direction of graphene and run along long axes to edges of an arm-chair. The long axes of the graphene nanoribbons are oriented along direction of the germanium substrate. RMs roughness and length of edges of the graphene nanoribbons are about 1 nm and 40 nm, respectively. USE - Graphene nanoribbon array for electronic and photonic devices such as FET and photo-detector. ADVANTAGE - The array utilizes inexpensive CVD scalable technique for offering high throughput and compatibility with planar processing. The array achieves nanoribbons with widths below current lithography resolution by tuning precursor composition and growth time and produces smooth-edged graphene nanoribbon with high density. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene nano-ribbon with armchair edges perfectly aligned along germanium direction.