▎ 摘　　要

NOVELTY - The device has a transparent electrode (160) which is made of the graphene layer (162) and the contact layer (164). An active layer (140) is formed between the n-type nitride semiconductor layer (130) and the p-type nitride semiconductor layer (150). An un-doped semiconductor layer (120) is formed on a substrate (110). An n-type electrode (170) is formed on the n-type nitride semiconductor layer. The contact layer is formed with the grating pattern, and is comprised of silver, nickel-silver alloy, and the nickel-gold alloy. USE - Semiconductor light emitting device e.g. vertical structure LED or flip-chip structure LED. ADVANTAGE - The heat generated in the light emitting device can be dispersed, the temperature of the light emitting device can be lowered, and high thermal conductivity can be realized. The life span of the light emitting device is prolonged, the electric conductance is very good, and the luminous efficiency is improved. The adhesivity of the conductive layer and transparent electrode is improved and the stable transparent electrode can be formed. The semiconductor light emitting device with improved electrical characteristic and optical permeability can be formed. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the semiconductor light emitting device. Substrate (110) Un-doped semiconductor layer (120) N-type nitride semiconductor layer (130) Active layer (140) P-type nitride semiconductor layer (150) Transparent electrode (160) Graphene layer (162) Contact layer (164) N-type electrode (170)