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  • 专利标题:   Graphene composition, useful in electrical device, preferably e.g. sensor, bipolar junction transistor, field effect transistor and light emitting diode, comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer.
  • 专利号:   US2011309336-A1, KR2011138195-A, US9281385-B2, KR1878750-B1
  • 发明人:   SHIN H, CHOI J, AHN J, JEON C, AHN J R, CHOI J Y, JEON C H, SHIN H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   B32B015/04, B82Y030/00, H01L029/78, B82B001/00, C01B031/02, H01L021/328, H01L051/50, B82Y010/00, B82Y040/00, H01L021/28, H01L029/06, H01L029/16, H01L029/49, H01L029/73, H01L029/76, H01L029/778, H01L029/786
  • 专利详细信息:   US2011309336-A1 22 Dec 2011 H01L-029/78 201202 Pages: 17 English
  • 申请详细信息:   US2011309336-A1 US164532 20 Jun 2011
  • 优先权号:   KR058229

▎ 摘　　要

NOVELTY - Graphene composition (13) comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer. USE - The graphene composition is useful in an electrical device, preferably a sensor, a bipolar junction transistor, a field effect transistor, a heterojunction bipolar transistor, a single electron transistor, a light emitting diode, and an organic electroluminescent diode (all claimed). ADVANTAGE - The graphene composition exhibits improved semiconducting properties and retains its high charge mobility properties. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a field effect transistor. Silica substrate (12) Graphene composition (13) Source electrode (14) Drain electrode (16) Insulating layer. (17)