• 专利标题:   Method for reducing resistivity of single crystal copper wire, involves annealing single crystal copper under non-oxidizing gas and protective gas atmosphere, introducing carbon-containing gas into copper wire, reacting and cooling.
  • 专利号:   CN112899694-A
  • 发明人:   NOVOSELOV K
  • 专利权人:   NOVOSELOV K
  • 国际专利分类:   C21D001/26, C21D009/52, C22F001/08, C23C016/26, C23F017/00
  • 专利详细信息:   CN112899694-A 04 Jun 2021 C23F-017/00 202151 Pages: 8 Chinese
  • 申请详细信息:   CN112899694-A CN10053896 15 Jan 2021
  • 优先权号:   CN10053896

▎ 摘  要

NOVELTY - Reducing resistivity of single crystal copper wire comprises (i) annealing single crystal copper under non-oxidizing gas and protective gas atmosphere at 500-1000° C, and (ii) introducing carbon-containing gas into the single crystal copper wire, reacting at 0.1-760 torr for 0.1-9999 minutes, stopping introducing the carbon-containing gas, and cooling to room temperature to obtain the single crystal copper wire covering the graphene film, where the carbon-containing gas comprises carbon monoxide, methane, acetylene, ethanol, benzene, toluene, cyclohexane, and/or phthalocyanine. USE - The method is useful for reducing resistivity of single crystal copper wire. ADVANTAGE - The method is simple and easy, has high repetition degree, and greatly reduces resistance rate of the single crystal copper wire after growing graphene.