▎ 摘　　要

NOVELTY - The chemical vapor deposition auxiliary device (1) has cover plates (100) and a sealing element (200) that is provided between the cover plates. A metallic foil is deposited on a substrate (300) placed above sealing element. A gas inlet and a gas outlet are provided in opposite sides of sealing element, such that gas is supplied or exhausted with respect to the outer peripheral surfaces of sealing element. USE - Chemical vapor deposition (CVD) auxiliary device for use in production of high quality and large sized graphene used for manufacturing of semiconductor device. ADVANTAGE - The evaporation of metallic foil at high temperature is prevented effectively. High-quality and large-sized graphene can be produced reliably. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of CVD auxiliary device. Chemical vapor deposition auxiliary device (1) Cover plates (100) Sealing element (200) Substrate (300)