• 专利标题:   Nano-sized point light source for use in e.g. nanometer photoelectric integrated system, has bias voltage provided to graphene-metal node and single-point or multi-point light emitting light source in nanometer size formed at metal node.
  • 专利号:   CN102082159-A, CN102082159-B
  • 发明人:   WANG Z, ZHANG X, HUANG R, FU Y, DENG S, ZHAO H, WEI Q, WEI Z
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   B82Y040/00, B82Y099/00, H01L027/15, H01L033/00
  • 专利详细信息:   CN102082159-A 01 Jun 2011 H01L-027/15 201149 Pages: 11 Chinese
  • 申请详细信息:   CN102082159-A CN10522990 27 Oct 2010
  • 优先权号:   CN10522990

▎ 摘  要

NOVELTY - The light source has a graphene thin film and a metal electrode that are electrically connected with each other in an atmospheric condition at room temperature. The graphene thin film and the metal electrode are crossed or the graphene thin film is mounted on two metal electrodes to form an electric touch. A graphene-metal node is formed at a touched part between the graphene thin film and the metal electrode. A bias voltage is provided to the graphene-metal node and a single-point or multi-point light emitting light source in nanometer size formed at the graphene-metal node. USE - Nano-sized point light source. Uses include but are not limited to a nanometer photoelectric integrated system, a nanometer integrated optical path, a high-resolution display and a quantum information technology. ADVANTAGE - The light source can stably work in atmospheric condition at room temperature, and avoids use of vacuum device. The light source ensures flexibility of the graphene thin film, a photoelectric device, a circuit, a display or an integrated system that are arranged on a flexible substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a top perspective view of a nano-sized point light source.