▎ 摘　　要

NOVELTY - The device has a device main body provided with a substrate layer (1), a buffering layer (2), an N-type semiconductor layer (3), an active layer (4), a P-type semiconductor layer (5), a graphene thin film layer (6) and a metal electrode (7). The P-type semiconductor layer is equipped with a gallium nitride composite material layer. The graphite thin film layer is formed with a hole. The metal electrode passes through the graphene thin film layer. The graphene thin film layer is equipped with a bonding pad. The graphene thin film layer and the metal electrode are connected with each other. USE - Graphene electrode integrated gallium nitride base semiconductor device. ADVANTAGE - The device realizes self-growing function of a low temperature graphite electrode and increases distributed electric current of a light, and has better radiating effect. DETAILED DESCRIPTION - The metal electrode is made of gold, silver, platinum, nickel, titanium and zinc material. The metal electrode is equipped with a MO source unit. The MO source unit is made of trimethyl gallium, dimethyl gallium, three ethyl in gallium, trimethyl indium and ethyl dimethyl indium. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene electrode integrated gallium nitride base semiconductor device. Substrate layer (1) Buffering layer (2) N-type semiconductor layer (3) Active layer (4) P-type semiconductor layer (5) Graphene thin film layer (6) Metal electrode (7)