• 专利标题:   Synthesis of Q-carbon, graphene and diamond used as e.g. nanodots, involves depositing amorphous carbon on substrate, melting amorphous carbon into undercooled state and quenching melted amorphous carbon from undercooled state.
  • 专利号:   US2017037530-A1
  • 发明人:   NARAYAN J
  • 专利权人:   UNIV NORTH CAROLINA STATE
  • 国际专利分类:   C01B031/02, C01B031/04, C01B031/06, C23C014/06, C23C014/28, C30B013/10, C30B013/24, C30B029/04
  • 专利详细信息:   US2017037530-A1 09 Feb 2017 C30B-013/10 201715 Pages: 76 English
  • 申请详细信息:   US2017037530-A1 US230870 08 Aug 2016
  • 优先权号:   US202202P, US230870

▎ 摘  要

NOVELTY - Synthesis of Q-carbon, graphene and diamond involves depositing (7402) amorphous carbon on a substrate, melting (7404) the amorphous carbon into an undercooled state and quenching (7406) the melted amorphous carbon from the undercooled state. USE - Synthesis of Q-carbon, graphene and diamond used as nanodot, nanodiamond, microdiamond, nanoneedle, microneedle or large area single crystal film (all claimed). ADVANTAGE - The method provides Q-carbon having enhanced mechanical, chemical, and physical properties, and enhanced hardness, electroconductivity, room-temperature ferromagnetism, field emission, and electron emission characteristics. Q-carbon is harder than diamond from covalent bond length determinations and has shorter average carbon-carbon length than diamond (less than 0.154 nm) and can also act as semiconductor and exhibit robust ferromagnetism. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the process for quenching to form Q-carbon, graphene and diamond. Film depositing process (7402) Film melting process (7404,7408) Melted film quenching process (7406,7410)