▎ 摘　　要

NOVELTY - The transistor has substrate (1) that is surface coating photo-resist which carries out photoetching technology. A first photo-resist image (3) is formed on photo-resist surface of substrate as mask by etching. A groove (2) is formed with substrate structure through chemistry gas phase depositing method in graphene (4). The graphene The graphene is formed in the surface of a deposition layer metal layer (5). A graphene component (6) is formed and transferred to set with groove of substrate. A metal layer (5) is formed on the surface to form a second photoresist image (7). USE - Semi-suspension preparation graphene field effect transistor. ADVANTAGE - The damage and contamination of graphene is avoided. The interfacial scattering from the substrate is reduced to achieve graphene carriers of high mobility. Thus the high-frequency graphene transistor is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the semi-suspension preparation graphene field effect transistor. Substrate (1) Groove (2) Leakage electrode (8) Source electrode (9) Insulation medium (10)