▎ 摘　　要

NOVELTY - Manufacturing aluminum nitride, comprises: providing an electrolyte comprising choline chloride, urea, aluminum chloride, boric acid, and ascorbic acid; disposing a workpiece, where at least a part of the workpiece is in contact with the electrolyte; heating the electrolyte to within 60-95degrees Celsius; applying an operating current to electroplate aluminum onto the workpiece; and annealing the aluminum on the workpiece to form aluminum nitride. The electrolyte further comprises saccharin, graphene or graphene oxide. USE - The method is useful for manufacturing aluminum nitride which is useful as packaging substrate of semiconductors and microelectronics, a substrate for carrying high brightness LED chips, automotive electronics, lighting components, heat-dissipating material for high-power electronic components, IC packaging material, surface acoustic wave (SAW) components, bulk acoustic wave (BAW) components, light-emitting diode, and gate dielectric layer for high-temperature disclosure. ADVANTAGE - The method: provides aluminum nitride having wurtzite structure which belongs to the hexagonal crystal system; solves problem of high cost due to the complex process when the aluminum nitride coatings are manufactured by chemical vapor deposition; utilizes composition of the electrolyte used in the electroplating process is safe and non-toxic, and can be reused to reduce the waste of resources. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the manufacturing method of aluminum nitride.