▎ 摘　　要

NOVELTY - The transistor has a substrate provided with a channel and composed of a metal oxide and quantum dot material layer. The metal oxide and quantum dot material layer includes perovskite quantum dots, graphene quantum dots, carbon quantum dots, silicon quantum dots and cadmium telluride quantum dots, where thickness of the quantum dot material layer is 5 nm-20 nm. The metal oxide and quantum dot material layer includes gallium oxide, zinc oxide, indium oxide, cadmium oxide and tin oxide materials. The channel is composed of a first metal oxide thin film layer and a second metal oxide thin film layer. USE - Three-terminal thin film transistor for a photosensitive nerve synaptic device (Claimed). ADVANTAGE - The transistor realizes characteristics of high visible light response intensity and strong continuous photoconductivity effect and broadens response spectrum of photosensitive nerve synapses to satisfy needs of photosensitive nerve synapses in visible light band. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a three-terminal thin film transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a three-terminal thin film transistor.