▎ 摘　　要

NOVELTY - The method involves forming a copper layer (303) over at least two semiconductor substrates (301). A chemical mechanical polishing is performed on the semiconductor substrate to form multiple recesses. A graphene (302) is plated on the recesses of the copper layer (303). The heat treatment is performed to the semiconductor substrates so that the copper layer is formed by bonding the graphene on the copper layer. USE - Method for suppressing copper electromigration in wafer bonding. ADVANTAGE - The electromigration of copper is suppressed by carrying out heat treatment at certain temperature. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the process for suppressing copper electromigration in wafer bonding. Semiconductor substrate (301) Graphene (302) Copper layer (303)