▎ 摘　　要

NOVELTY - A composition of article comprises sapphire, silicon, silicon carbide, gallium oxide, or III-V group semiconductor substrate, and an intermediate III-V group semiconductor layer placed directly on top of substrate, and a graphene layer placed directly on the intermediate layer, and holes are placed through the graphene layer, and nanowires or nanopyramids grown from intermediate layer in the holes. The nanowires or nanopyramids comprise at least one semiconducting group III-V compound. USE - Composition of article used for optoelectronic device such as solar cell, photodetector, and LED. ADVANTAGE - The composition of article provides optoelectronic device having excellent electrical property and optical property. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabrication of optoelectronic devices. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating fabrication of device.