▎ 摘　　要

NOVELTY - A graphene-based sulfonated/poly (3,4-ethylenedioxy-thiophene)-poly(styrene sulfonic acid) composite memory device comprises lower electrode, electro active intermediate layer formed by spin coating graphene-based sulfonated/poly (3,4-ethylenedioxy-thiophene)-poly(styrene sulfonic acid) composite, and electro active memory layer deposited on upper electrode. USE - Graphene-based sulfonated/poly (ethylenedioxy-thiophene)-poly(styrene sulfonic acid) composite memory device (claimed). DETAILED DESCRIPTION - A graphene-based sulfonated/poly (3,4-ethylenedioxy-thiophene)-poly(styrene sulfonic acid) composite memory device comprises lower electrode, electro active intermediate layer formed by spin coating graphene-based sulfonated/poly (3,4-ethylenedioxy-thiophene)-poly(styrene sulfonic acid) composite, and electro active memory layer deposited on upper electrode. The graphene-based sulfonated/poly (3,4-ethylenedioxy-thiophene)-poly(styrene sulfonic acid) composite is obtained by carrying out chemical reduction to graphite, performing sulfonation reaction, adding aqueous solution of graphene-based sulfonated/poly (3,4-ethylenedioxy-thiophene)-poly(styrene sulfonic acid), and ultrasonically dispersing for 30-60 minutes. An INDEPENDENT CLAIM is included for preparation of graphene-based sulfonated/poly (3,4-ethylenedioxy-thiophene)-poly(styrene sulfonic acid) composite memory device.