▎ 摘　　要

NOVELTY - The transistor has an insulating material layer which is equipped with lower portion of graphene. The piezo material is equipped with lower portion of graphene. The etched position of insulating material layer includes circuit. A crossed obstacle regulating circuit is equipped with lower portion of piezo material. The on/off of electricity is controlled by bending of graphene. The height of Fermi level of graphene is controlled. USE - Electron tunneling graphene transistor. ADVANTAGE - The processing speed of transistor is improved reliably. The on/off of electricity is controlled effectively. DESCRIPTION OF DRAWING(S) - The drawing shows a photographic view of the electron tunneling graphene transistor.