• 专利标题:   Method for forming graphene pattern on scene domain/electrode area of touch panel, involves arranging mask in upper side of graphene layer, exposing mask to oxidize atmosphere on substrate, and forming graphene pattern by removing mask.
  • 专利号:   KR2011090398-A
  • 发明人:   AHN J H, HONG B H
  • 专利权人:   SAMSUNG TECHWIN CO LTD, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI
  • 国际专利分类:   G06F003/041
  • 专利详细信息:   KR2011090398-A 10 Aug 2011 201172 Pages: 17
  • 申请详细信息:   KR2011090398-A KR010140 03 Feb 2010
  • 优先权号:   KR010140

▎ 摘  要

NOVELTY - The method involves forming a graphene layer on a base substrate, and arranging a mask in upper side of the graphene layer. The mask is exposed to oxidize atmosphere on the arranged substrate, and a graphene pattern is formed by removing the mask. A protective film is formed on the graphene pattern, where the protective film is made of a material selected from a group consisting of poly 3, 4-ethylenedioxythiophene (PEDOT)/poly-styrenesulfonate (PSS), thiophene system polymer, polypyrrole, polyaniline, ferroelectric polymer or ferroelectric inorganic material. USE - Method for forming a graphene pattern on a scene domain or electrode area of a touch panel. ADVANTAGE - The method enables formation of the pattern on a scene domain or electrode area of a touch panel by using oxidation reaction of graphene, so that conducting property and visible light property of the graphene can be maintained, and response speed of the touch panel can be increased. The scene domain and electrode area of the touch panel can be formed by simplified manufacturing process, so that manufacturing time and cost can be reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a graphene pattern formation method.'(Drawing includes non-English language text)'