▎ 摘　　要

NOVELTY - The method involves forming connecting lines, a electrodes on a silicon substrate (110). An interlayer dielectric (122) is formed on the silicon substrate to cover the connecting lines (120) and partially expose two electrodes. An insulating layer (112) is formed on the interlayer dielectric. A graphene layer is formed on the insulating layer. The graphene layer having a primary end is connected to the primary electrode and a secondary end is connected to the secondary electrode. USE - Method of fabricating graphene electronic device. ADVANTAGE - The graphene electronic device is fabricated so as to prevent a degradation of graphene characteristics. The graphene process can be performed at a low temperature. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a graphene electronic device. Graphene electronic device (100) Silicon substrate (110) Insulating layer (112) Connecting lines (120) Interlayer dielectric (122)