▎ 摘　　要

NOVELTY - Preparing graphene-carbon nanotube heterojunction comprises (i) cleaning the growth substrate ultrasonically in ultra-pure water, acetone, ethanol and ultra-pure water, blow drying with high-purity nitrogen, adding the cleaned substrate into a muffle furnace, carrying out high temperature annealing in the air for 2 hours to 900 degrees C, maintaining at 900 degrees C for 8 hours, cooling to 300 degrees C for 10 hours and cooling naturally; (ii) mechanically stripping graphene on the processed growth substrate; (iii) loading catalyst on the growth substrate with graphene and introducing hydrogen and carbon source into the chemical vapor deposition system for growth of single-wall carbon nano tube; and (iv) cooling the system. USE - The method is useful for preparing graphene-carbon nanotube heterojunction. ADVANTAGE - The preparation method: is simple; produces good quality finished product with high electrical properties.; and can weld top growth of the catalyst particles, the carbon nanotubes and graphene together at a high temperature.