▎ 摘　　要

NOVELTY - Manufacture of Damascus structure involves providing a semiconductor substrate comprising a metal conductive layer, forming a dielectric layer and a hard mask on the semiconductor substrate, forming a photoresist (P1) on the hard mask, patterning the photoresist (P1), etching the hard mask using the photoresist (P1) as a mask, forming an opening (O2) which penetrates the hard mask in the hard mask, removing the photoresist (P1), forming a photoresist (P2), patterning the photoresist (P2), using the photoresist (P2) as a mask for etching the dielectric layer to form an opening (O2) in the dielectric layer, removing the photoresist (P2), using the hard mask as a mask to etch the dielectric layer, forming a trench through the opening (O1), forming a layer of through holes for exposing the conductive metal through the opening (O2), removing the hard mask to form a graphene layer covering the bottom and sidewalls of the through hole and the trench, and forming a metal layer. USE - Manufacture of Damascus structure (claimed). ADVANTAGE - The Damascus structure contains graphene layer which effectively reduces the electromigration of the metal layer, satisfies the process requirement of the high node. DETAILED DESCRIPTION - Manufacture of Damascus structure involves providing a semiconductor substrate comprising a metal conductive layer, forming a dielectric layer and a hard mask on the semiconductor substrate, forming a photoresist (P1) on the hard mask, patterning the photoresist (P1), etching the hard mask using the photoresist (P1) as a mask, forming an opening (O2) which penetrates the hard mask in the hard mask, removing the photoresist (P1), forming a photoresist (P2), patterning the photoresist (P2), using the photoresist (P2) as a mask for etching the dielectric layer to form an opening (O2) in the dielectric layer, in which the opening (O2) communicates with the opening (O1) and the width of the opening (O2) is smaller than the width of the opening (O1), removing the photoresist (P2), using the hard mask as a mask to etch the dielectric layer, forming a trench through the opening (O1), forming a layer of through holes for exposing the conductive metal through the opening (O2), removing the hard mask to form a graphene layer covering the bottom and sidewalls of the through hole and the trench, and forming a metal layer covering the graphene layer and filling the through holes and the trenches. An INDEPENDENT CLAIM is included for Damascus structure.