▎ 摘　　要

NOVELTY - The structure has a mask substrate (1) whose middle part is fixed with a releasing window (11). A graphite micro-belt (42) is located in an etching groove (21). A semiconductor nanometer blind hole layer (22) is formed with a silicon oxide nanometer blind hole (32). A semiconductor layer (2) is arranged with the releasing window. A silicon oxide insulation layer (3) is arranged with a door window. An insulation layer (5) is located on an electrode layer. An upper part of the insulation layer is formed with a nanometer hole (45). USE - Multi-gate graphene FET structure for use in a bio-logical medical field. ADVANTAGE - The structure is inexpensive, and occupies less space. The structure utilizes CMOS to improve compatibility and expansibility of a FET. The structure has wide application range. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a multi-gate graphene FET structure manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a multi-gate graphene FET structure. Mask substrate (1) Semiconductor layer (2) Silicon oxide insulation layer (3) Insulation layer (5) Releasing window (11) Etching groove (21) Semiconductor nanometer blind hole layer (22) Silicon oxide nanometer blind hole (32) Graphite micro-belt (42) Nanometer hole (45)