▎ 摘　　要

NOVELTY - A graphene is prepared by taking graphite in hot reflecting screen of barrel, setting silicon carbide in the bottom of graphite in the groove, setting graphite barrel in quartz heating cavity, ensuring water vapor and organic impurities in vacuum condition in quartz heating cavity through mode radio frequency, removing surface of substrate, maintaining heating rate to annealing temperature, preserving heat, controlling silicon atom and carbon atom in silicon carbide substrate surface sublimation, reconstructing to form graphene structure of silicon carbide substrate surface, and cooling. USE - Preparation of graphene used for manufacturing semiconductor device. ADVANTAGE - Method saves production cost and improves production efficiency. DETAILED DESCRIPTION - A graphene is prepared by taking graphite in hot reflecting screen of barrel, setting silicon carbide in the bottom of graphite in the groove, setting graphite barrel in quartz heating cavity, ensuring water vapor and organic impurities in vacuum condition in quartz heating cavity through mode radio frequency, removing surface of substrate, maintaining heating rate to annealing temperature, preserving heat, controlling silicon atom and carbon atom in silicon carbide substrate surface sublimation, reconstructing to form graphene structure of silicon carbide substrate surface, cooling to 1300 degrees C, and cooling along with the furnace. An INDEPENDENT CLAIM is included for a device for preparing the graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a graph of the Raman spectrum of graphene.