▎ 摘　　要

NOVELTY - The method involves using chemical vapor deposition method to form a layer of silicon nitride on the silicon substrate as an etching protective layer, and then etching the one slender nanometer groove of silicon dioxide substrate. Several continuous copper layers are formed to the nano-inner groove using low pressure chemical vapour deposition. The atom layer deposition process is used to cover the graphene nano-line form high-k gate medium. The source electrode, drain electrode and gate device are provided to form the graphene nano-wire device. USE - Graphene nano-wire preparation method. ADVANTAGE - The production of graphene nano-wire is performed easily, conveniently and reliably. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram explaining the process for preparing graphene nano-wire. (Drawing includes non-English language text)