▎ 摘　　要

NOVELTY - The transistor has a source electrode and a drain electrode arranged opposite to each other. A gate electrode structure is located between the drain electrode and the source electrode. A graphene channel layer (10) is formed between the drain electrode and the source electrode. A top part structure is provided with multiple convex strips (13). Multiple convex strips are transversely arranged to each other in a parallel manner, where a gap (3) is formed between the adjacent convex strips. The channel layer graphene is located on the convex strip on a top part of a grid mechanism. The convex strips are formed as a semi-circular-shaped structure, where the graphene channel layer is a graphene film and a deposited metal is titanium, platinum, chromium, gold, aluminum, nickel, copper and silver. USE - Graphene FET. ADVANTAGE - The graphene channel layer in the solution is located on the convex strip, because there is a gap between the adjacent convex strips, so that the graphene in the upper surface of the channel layer and the gate structure is not completely contact, thus reducing the influence of the substrate on the graphene, and hence improving the carrier mobility of the graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene field-effect transistor (FET). DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene FET. 2Gate structure 3Gap 10Graphene channel layer 13Convex strips