▎ 摘　　要

NOVELTY - Composition comprises nanowire formed from GaAs_1_-_xSb_x, where x is 0.05-0.5. The nanowire is grown on a graphitic substrate. USE - Composition used in flexible near infrared photodetector. ADVANTAGE - The composition has better stress-strain management, increased defect tolerance, reduced reflection, enhanced light trapping and improved band gap tuning. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing multiple gallium arsenic antimonide nanowires on graphitic substrate, which involves: (i) subjecting a graphitic substrate to a plasma treatment, optionally an oxygen plasma treatment; (ii) baking the plasma treated graphitic substrate; (iii) performing a molecular beam epitaxy using a flux of gallium atoms to create multiple gallium droplets; and (iv) performing a molecular beam epitaxy using fluxes of each of gallium, arsenic and antimony atoms to grow nanowire structures. DESCRIPTION OF DRAWING(S) - - The drawing shows a schematic view of the growth process of gallium arsenic antimonide nanowires on monolayer graphene on substrate. Substrate (100) Graphene layer (200) Gallium droplet (300) Gallium arsenic antimonide nanowires (400)