▎ 摘　　要

NOVELTY - Etching method for direct formation of multilayer graphene film by chemical vapor deposition method of graphene, involves growing graphene on one side of substrate, coating other side of growth substrate with a protective glue solution, etching the growth substrate, removing the graphene layer, forming the two layers of graphene films on sides of graphene layer which are respectively located on two sides of growth substrate to form double layer, calcining the multi-layer graphene film, removing surface protective glue, washing with water and drying to obtain multilayer graphene film. USE - Etching method for direct formation of multilayer graphene film by chemical vapor deposition method of graphene (claimed). DETAILED DESCRIPTION - Etching method for direct formation of multilayer graphene film by chemical vapor deposition method of graphene, involves growing graphene on one side of the substrate by chemical vapor deposition method, bonding the graphene together with the substrate, coating the other side of the growth substrate with a protective glue solution, heating and curing the growth substrate, etching the treated growth substrate into the etching solution, removing the graphene layer arranged between the two sides of the growth substrate, forming the two layers of graphene films on the two sides of the graphene layer which are respectively located on the two sides of the growth substrate to form a double layer, calcining the multi-layer graphene film, removing the surface protective glue, washing with water and drying to obtain multilayer graphene film.