▎ 摘　　要

NOVELTY - Manufacture of silicon-reduced graphene oxide composite material involves reacting graphene oxide nanosheets and the silicon source in a mixed solution of alcohol and water at pH of 8-10 at reaction temperature of 35-65 degrees C and obtaining graphene oxide modified with silicon quantum dots after the reaction is completed, and using an aqueous glucose solution to in situ reduction the graphene oxide modified by the silicon source at reaction temperature of 40-80 degrees C. The silicon-reduced graphene oxide composite material includes reduced graphene oxide and silicon quantum dots which are connected to the reduced graphene oxide. The silicon source includes a silane coupling agent. USE - Manufacture of silicon-reduced graphene oxide composite material used for forming silicon-reduced graphene oxide gas-sensitive film for manufacturing gas sensor for detecting nitrogen dioxide gas (all claimed). ADVANTAGE - The method enables simple manufacture of the silicon-reduced graphene oxide composite material under mild reaction conditions and having excellent electroconductivity, high sensitivity to nitrogen oxide at room temperature and low detection limit. The sensor has small volume, low power consumption and stable structure. The silicon-reduced graphene oxide gas sensitive film is firmly bonded to the electrode. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) silicon-reduced graphene oxide composite material, which comprises reduced graphene oxide and silicon quantum dots which are connected to the reduced graphene oxide and having particle size of 2-5 nm, and has mass ratio of the reduced graphene oxide to the silicon quantum dots of 90-99:10-1; (2) use of silicon-reduced graphene oxide composite material for preparing gas sensor for detecting nitrogen dioxide gas; and (3) gas sensor.