▎ 摘　　要

NOVELTY - The device has a data storage layer formed over a semiconductor substrate (110) in which a lower structure is formed. An electrode structure is formed on a side of the data storage layer over the substrate. The electrode structure includes a lower electrode (120) placed below the data storage layer and including a heating pattern (125) for contacting a phase-change material pattern (130) and generating heat when current flows. A metal pattern (121) is provided in shape to confine the heating pattern. A graphene pattern (123) is interposed between the metal pattern and the heating pattern. USE - Semiconductor device for use in an electronic apparatus e.g. computer and portable communication apparatus. ADVANTAGE - The device reduces metal resistance and prevents adjacent cells from being affected in process of storing data in a selected cell required in the device in an efficient manner, while improving cell efficiency. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Semiconductor substrate (110) Interlayer insulating layers (113, 113A, 113B, 127) Switching device (115) Lower electrode (120) Metal pattern (121) Graphene pattern (123) Heating pattern (125) Phase-change material pattern (130) Upper electrode (150)