▎ 摘　　要

NOVELTY - Photoelectrode material comprises substrate (100), gallium nitride layer (110) which is provided on substrate, graphene layer (120) which is provided on an upper portion of gallium nitride layer. The gallium and indium are based with nitride and grown on upper portion of gallium nitride layer. The upper portion of the patterned graphene layer (120a) in a region where patterned graphene layer is not located and gallium and indium-type nitride (140a, 140b) which is formed on gallium nitride layer which has different shapes. USE - Photoelectrode material. ADVANTAGE - The photoelectrode material has large surface area which improved the photo current. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing semiconductor device, which involves: (A) preparing substrate which is provided with gallium nitride layer; (B) forming graphene layer on gallium layer; (C) selectively etching the graphene layer to form patterned graphene layer; (D) Growing nitride based on top of gallium nitride layer and the top of the patterned graphene layer in region, where patterned graphene layer is not located; and (E) growing (gallium, indium) type nitride on patterned graphene layer and the (Ga, In) type nitride grown on gallium nitride layer in different forms. DESCRIPTION OF DRAWING(S) - The drawing shows a shows a schematic view of a photoelectrode material. Substrate (100) Gallium nitride layer (110) Graphene layer (120) Patterned graphene layer (120a) Gallium and indium-type nitride (140a, 140b)