• 专利标题:   Kit for transferring graphitic thin film useful in construction of small components has gallium probe shank comprising loop, drop of gallium and heat source, and three-chamber etching container.
  • 专利号:   US2021078316-A1
  • 发明人:   GILBERT J, STEEN H, ANDREW K, PAPE R C
  • 专利权人:   VAON LLC
  • 国际专利分类:   B32B037/00, B32B037/24, B32B038/10, B32B009/00, C23F001/08, C23F001/18
  • 专利详细信息:   US2021078316-A1 18 Mar 2021 B32B-037/00 202137 English
  • 申请详细信息:   US2021078316-A1 US091018 06 Nov 2020
  • 优先权号:   US588994P, US091018

▎ 摘  要

NOVELTY - The kit comprises gallium probe, and etching container. The gallium probe comprises (i) shank, (ii) loop attached to first end of the shank, (iii) drop of gallium in contact with the loop and (iv) heat source capable of liquefying gallium. The etching container comprises (i) first chamber comprising etchant solution, first port, and second port, where etchant level is above the level of the ports and is in contact with metal layer of graphitic-metal material; (ii) second chamber adjacent to the chamber, comprising the etchant solution and first port in liquid contact with the first port of the first chamber, where the etchant level is above the level of the first port; and (iii) third chamber adjacent to the first chamber, comprising the etchant solution and first port in liquid contact with the second port of the first chamber, where the etchant level is above the level of the first port. USE - The kit for transferring graphitic thin film is useful in the construction of small components that require precise placement of submillimeter thin films, e.g. small graphene flakes and crystal domains, or other delicate 2D structures. ADVANTAGE - The kit enables construction of small components without damage or supportive layer residue contamination.