• 专利标题:   Preparing graphene thin layer on the surface of metal catalyst involves reacting carbon source and metal catalyst substrate in presence of hydrogen and argon so as to perform carburization reaction.
  • 专利号:   CN103572247-A
  • 发明人:   GAO S, GENG X, GONG Y, LIU L, LONG M, ZHANG X, ZHU C
  • 专利权人:   SUZHOU INST NANOTECH NANOBIONICS
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/52
  • 专利详细信息:   CN103572247-A 12 Feb 2014 C23C-016/26 201427 Pages: 11 Chinese
  • 申请详细信息:   CN103572247-A CN10262333 27 Jul 2012
  • 优先权号:   CN10262333

▎ 摘  要

NOVELTY - Preparing graphene thin layer on the surface of metal catalyst involves reacting carbon source and the metal catalyst substrate at 700-1050 degrees C in presence of hydrogen and argon so as to perform carburization reaction. The surface of the metal catalyst body is processed by hydrogen etching at 800-1200 degrees C to remove the disordered carbon layer from the surface of the metal catalyst in presence of inert gas or vacuum. The metal catalyst is quickly cooled to room temperature. USE - Preparing graphene thin layer on the surface of metal catalyst (claimed). ADVANTAGE - The method enables preparing graphene thin layer on the surface of metal catalyst in a simple and easy manner.