▎ 摘　　要

NOVELTY - The semiconductor structure has a semiconductor layer (102) that defines a first surface and a second surface opposite to the first surface. A metallic carbon nanotube is located on the first surface of the semiconductor layer. A graphene layer (106) is located on the second surface of the semiconductor layer. The metallic carbon nanotube, the semiconductor layer and the graphene layer are stacked with each other to form three-layered stereoscopic structure. USE - Semiconductor structure such as multi-layered stereoscopic structure used in semiconductor device such as transistor for photodetector (all claimed) of spectrometer. ADVANTAGE - The process of annealing removes impurities on the surface of the semiconductor structure, and enhances the bonding force between the graphene layer, the semiconductor layer, and the metallic carbon nanotubes. The photodetector achieves extremely high resolution by adjusting the gate voltage and bias, and is used for detection of a fine spectral structure. The spectrometer achieves high precision, high sensitivity and high resolution by adjusting the gate voltage and the bias. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a semiconductor device; and (2) a photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of stereoscopic structure of a semiconductor device. Semiconductor layer (102) Graphene layer (106) Semiconductor device (200) Gate electrode (202) First electrode (204)