• 专利标题:   Support unit for substrate processing apparatus, has electrode that is arranged between main portion and dielectric layer and is made of material including graphene.
  • 专利号:   KR2021142266-A, KR2428349-B1
  • 发明人:   SIM H
  • 专利权人:   PSK INC
  • 国际专利分类:   B23Q003/15, H01J037/32, H01L021/67, H01L021/683, H01L021/687, H02N013/00
  • 专利详细信息:   KR2021142266-A 25 Nov 2021 H01L-021/683 202198 Pages: 20
  • 申请详细信息:   KR2021142266-A KR058878 18 May 2020
  • 优先权号:   KR058878

▎ 摘  要

NOVELTY - The support unit (230) has a main portion (231) made of a material including ceramic. A dielectric layer (232) is arranged on the main portion and is made of a material including ceramic. An electrode (235) is arranged between the main portion and the dielectric layer and made of a material including graphene. A groove is recessed downward in the central region is formed so that the height of the central region and the edge region of the upper surface is different from each other. USE - Support unit for substrate processing apparatus (claimed). ADVANTAGE - The substrate is efficiently processed. The heat is efficiently transferred to the substrate. The damage of the substrate due to displacement current generated in the substrate processing apparatus is minimized. The occurrence of micro-cracks in the electrode provided on the support unit is reduced. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method of manufacturing support unit; and (2) an apparatus for processing substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the support unit. Support unit (230) Main portion (231) Dielectric layer (232) Electrode (235) Electrostatic power supply (236)