▎ 摘　　要

NOVELTY - Photodetector and/or photovoltaic device comprises: a semiconducting substrate; and a solution including at least graphene quantum dot-modified (GQD) and poly(3,4-ethylene-dioxythiophene) polystyrene sulfonate (PEDOT:PSS), where the solution deposited as a layer on the semiconducting substrate. USE - The photodetector and/or photovoltaic device is useful: in sensitive photosensing applications e.g. low-light level biological imaging applications and next generation energy devices; and for high-speed optical communication. ADVANTAGE - The photodetector and/or photovoltaic device: performs exceptionally well in low-light photodetection and photovoltaic applications and exhibits ultrafast response times; exhibits extraordinary onmidirectional light absorption properties and/or exceptional weak light detection capabilities; exhibits high detectivity, high sensitivity, high responsivity, and low noise levels over a broad wavelength range, without requiring any cooling; is self-powered with low operation voltage; is fabricated via a simple, non-complex method that does not require the use of any toxic materials; and minimizes and/or eliminates unwanted defects, recombination sites and contaminations. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for fabricating a photodetector and/or photovoltaic device, comprising contacting (101) a quantity of the GQD with PEDOT:PSS to form a solution (102), and depositing (103) the solution as a layer on a semiconducting substrate (104). DESCRIPTION OF DRAWING(S) - The figure shows a schematic block flow diagram of the method of fabricating a photodetector and/or photovoltaic device. Method (100) Contacting (101) Solution (102) Depositing (103) Semiconductor substrate (104)