▎ 摘　　要

NOVELTY - Preparation of quantum dot light-emitting diode involves forming a layer of graphene oxide on a substrate, coating a mixed aqueous solution of tea polyphenol and hydrogen iodide on the graphene oxide layer, drying, cooling, obtaining graphene, forming a hole transport layer and a quantum dot light-emitting layer on graphene, forming an electronic transport layer on the quantum dot light-emitting layer, and forming a cathode on the electron transport layer. USE - Preparation of quantum dot light-emitting diode (claimed). ADVANTAGE - The method enables preparation of quantum dot light-emitting diode having excellent transparency. The conductivity of graphene used in the preparation of quantum dot light-emitting diode is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for quantum dot light-emitting diode.