▎ 摘　　要

NOVELTY - A silicon grating enhanced graphene field effect tube terahertz detector comprises a gate electrode (1), a silicon substrate (2), a gate dielectric layer (3), a single-layer graphene (4), a source (5) and a drain. The gate electrode is provided below the silicon substrate. The silicon substrate is P-type heavily doped silicon chip. The grid dielectrics layer is set on the silicon substrates. The alumina and the silicon grating substrate interface has good stability. The single layer graphene is located on the surface of the grid layer and is a conductive channel. The source electrode and the drain electrode are both located on both sides of the single layer of graphene and form an ohmic contact with the graphene. USE - Silicon grating enhanced graphene field effect tube terahertz detector. ADVANTAGE - The detector is simple, easy operation, working at room temperature, fast response speed, high sensitivity, and solves the important requirement of terahertz detection. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation of the detector comprising evaporating a gate electrode on a silicon substrate; performing UV lithography technology; etching the grating structure on the silicon substrate; preparing a grid dielectric layer; transferring the graphene to the grating structure surface; and preparing the source electrode and the drain electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of silicon grating enhanced graphene field effect tube terahertz detector. Gate electrode (1) Silicon substrate (2) Gate dielectric layer (3) Single-layer graphene (4) Source (5)