• 专利标题:   Catalytic graphitization method useful for preparing high-thermal-conductivity graphene film, by dispersing catalyst in graphene sheet layer and carrying out graphitization on graphene-loaded catalyst, where catalyst is silicon salt.
  • 专利号:   CN107651671-A
  • 发明人:   GAO C, PENG L
  • 专利权人:   HANGZHOU GAOXI TECHNOLOGY CO LTD
  • 国际专利分类:   C01B032/184, C01B032/194
  • 专利详细信息:   CN107651671-A 02 Feb 2018 C01B-032/184 201816 Pages: 4 Chinese
  • 申请详细信息:   CN107651671-A CN10953497 13 Oct 2017
  • 优先权号:   CN10953497

▎ 摘  要

NOVELTY - Catalytic graphitization method involves dispersing a catalyst in a graphene sheet layer and carrying out graphitization on graphene-loaded catalyst at high temperature of 1600-2000 degrees C and high pressure of 20-60 MPa. The catalyst is soluble aluminum salt, silicon salt, boride, nickel salt, magnesium salt or calcium salt. USE - Catalytic graphitization method is useful for preparing the high-thermal-conductivity graphene film (claimed). ADVANTAGE - The catalytic graphitization method enables simple and economical preparation of graphene film with high thermal conductivity of 1800-2600 W/mK, film conductivity of 8000-10600 S/cm, large lamellar crystal and compact structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the method for the preparation of high-thermal-conductivity graphene film, which involves preparing graphene oxide with an average size of larger than 100 mu m into an aqueous graphene oxide solution with a concentration of 6-30 mg/ml, adding 0.1-5 %mass catalyst to the solution, ultrasonically dispersing, pouring into a mold plate, drying to form graphene oxide film, carrying out reduction using a reducing agent, heating the reduced graphene film at a temperature of 300-400 degrees C and a heating rate of less than 10 degrees C/minute under an air atmosphere for 0.5-2 hours, again heating at a temperature of 1600-2000 degrees C, a pressure of 20-60 MPa and a heating rate of less than 10 degrees C/minute under an inert gas atmosphere for more than 3 hours, and pressing the graphene film at high pressure to obtain high-thermal-conductivity graphene film.