• 专利标题:   Method for preparing graphene film, involves obtaining three-dimensional connected graphene framework structure with high density, obtaining three-dimensional graphene porous, and pressing obtained three-dimensional graphene porous to form graphene film.
  • 专利号:   CN114229837-A
  • 发明人:   CHENG H, LIU H, MA C, REN W
  • 专利权人:   INST METAL RES CHINESE ACAD SCI
  • 国际专利分类:   C01B032/186, C01B032/194
  • 专利详细信息:   CN114229837-A 25 Mar 2022 C01B-032/186 202238 Chinese
  • 申请详细信息:   CN114229837-A CN11537990 15 Dec 2021
  • 优先权号:   CN11537990

▎ 摘  要

NOVELTY - The method involves heating a reaction furnace cavity to 600-1200 degrees centigrade under carrier gas protection atmosphere. A metal substrate is put into a reaction furnace cavity constant temperature area. Reducing gas is introduced. Carbon source gas is introduced into a reaction furnace cavity. Atmosphere of reducing gas and carrier gas are mixed. A three-dimensional connected graphene framework structure with high density is obtained. A three-dimensional graphene porous is obtained. The obtained three-dimensional graphene porous is pressed to form a graphene film. USE - Method for preparing a graphene film (claimed). ADVANTAGE - The film has high crystallization quality and flexibility, and excellent heat conduction and conductivity in an in-plane and vertical plane direction. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene film.