▎ 摘　　要

NOVELTY - The structure has a diffusion barrier layer (76) formed on a first material layer. A conductive material layer is formed on the diffusion barrier layer. An insulating layer covers an outside surface of the diffusion barrier and the material layers. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer including a size of less than 100 nm and a ratio (D/G) of D-band to G-band that is greater than 1, and a 2-dimensional (2D)/G of 2D band to G band that is less than 1. An edge of the diffusion barrier layer is aligned with an edge of the conductive material layer. USE - Layer structure for use in an electronic device e.g. memory device or logic device. ADVANTAGE - The layer structure has a diffusion barrier layer that reduces resistance increment according to a critical dimension reduction and prevents an unnecessary material from diffusing into peripheral regions. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the layer structure. Lower layer (70) Hole (74) Diffusion barrier layers (76, 80, 90, 100) Intermediate layer (88) Interlayer insulating layer (92)