▎ 摘　　要

NOVELTY - The method involves connecting a sub-electrode connecting wire with a second sub-electrode and third electrode whose top end is formed on the carbon nano-transistor suspension liquid surface of a semiconductor substrate. A floating potential dielectrophoresis structure is formed (S20) between second sub-electrode and third electrode for connecting (S40) a carbon nano-transistor to form upper metal layer on semiconductor substrate. The surface of the carbon nanotransistor is etched (S70) and is connected to the sub-electrodes to form a graphene nanometer belt on semiconductor substrate. USE - Manufacturing method of graphene field effect transistor. ADVANTAGE - The precise alignment of the graphene field effect transistor can be attained. The semiconductor characteristic can be improved effectively. The simplified structure can be achieved. The manufacturing cost can be reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the graphene field effect transistor manufacturing process. (Drawing includes non-English language text) Step for forming floating potential dielectrophoresis structure (S20) Step for forming carbon nanotube suspension liquid on surface of semiconductor substrate (S30) Step for connecting carbon nano-transistor (S40) Step for connecting floating potential dielectrophoresis structure in semiconductor substrate (S50) Step for etching surface of the carbon nanotransistor (S70)