▎ 摘　　要

NOVELTY - The device has a transfer graphene-containing layer formed on a source/drain electrode of a substrate. An upper part of the transfer graphene-containing layer is located on an upper part of a transfer graphene layer, gate dielectric layer and an upper medium layer of a gate. USE - Channel width controlled large area graphene nanometer belt Fin-FET device. ADVANTAGE - The device can realize large channel width for preparing graphite nano-belt Fin-FET device array. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a channel width controlled large area graphene nanometer belt Fin-FET device.